Growth of nitride-based light emitting diodes with a high-reflectivity distri…

(Ga,In)N/GaN multiple quantum well blue light emitting diodes (LEDs) grown on mesa-patterned silicon substrates with improved electro-optic characteristics are demonstrated.The active regions are grown on top of high-reflectivity AlN/(Al,Ga)N distributed Bragg reflectors (DBRs). Due to efficient stress relaxation at the mesa edges, crack formation during growth or upon the post-growth coolingd…