Fluorocarbon Chemistry: A 0-Dimensional Model for Oxide and Nitride Dry Etching

Abstract In this paper, a 0-dimensional model for the understanding of dry etching characteristics in silicon oxide and nitride materials is reported. The model is applied to analyze the etching performances in a design of experiments where gas mixtures are varied in the fluorocarbon chemistry typical of the “protected sidewall” regime. The modeling analysis of flat sample etching allows f…