Ditapis dengan
Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling
Abstract The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is = r…
- Edisi
- VOL. 14, NO. 2, MAY 2001
- ISBN/ISSN
- 0894-6507
- Deskripsi Fisik
- IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 14, NO. 2, MAY 2001
- Judul Seri
- IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 14, NO. 2, MAY 2001
- No. Panggil
- -
Effects of Abrasive Size Distribution in Chemical Mechanical Planarization: M…
Abstract Recently, a comprehensive model has been developed by Luo and Dornfeld (“Material removal mechanism in chemical mechanical polishing: theory and modeling,” IEEE Trans. Semiconduct. Manufact., vol. 14, pp. 112–133, May 2001) to explain the material removal mechanism in chemical mechanical planarization (CMP). Based on the model, the abrasive size distribution influences the mate…
- Edisi
- VOL. 16, NO. 3, AUGUST 2003
- ISBN/ISSN
- 0894-6507
- Deskripsi Fisik
- IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 3, AUGUST 2003
- Judul Seri
- IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 3, AUGUST 2003
- No. Panggil
- -
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