Reliability of CMOS on Silicon-on-Insulator for Use at 250 ◦C

This paper deals with the reliability of a 1.0-μm CMOS-silicon-on-insulator (SOI) process, which is intended for use at 250 ◦C. The goal is to give an overview of the most important reliability aspects that concern devices and circuits at temperatures of 250 ◦C and above. The investigated reliability aspects are the gate oxide integrity in terms of time-dependent dielectric breakdown meas…