Improved Channel Hot-Carrier Reliability in p-FinFETs With Replacement Metal …

Channel hot-carrier (CHC) reliability in p-FinFET devices is studied related to the postdeposition anneal (PDA) process. Clearly reduced CHC degradation is observed with N2-PDA at the VG = VD stress condition. The interface defect density degradation calculated from the subthreshold slope is similar in the reference and PDA devices. However, the pre-existing high-k bulk defect is lower in the P…