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Ditemukan 1 dari pencarian Anda melalui kata kunci: author="Nithi Atthi"
Variability Improvement by Si Surface Flattening of Electrical Characteristic…
Abstract—Variability improvement of metal-oxidesemiconductor field-effect transistors (MOSFETs) characteristics with high-k HfON gate insulator by Si surface flattening was investigated. The Si surface flattening process was carried out by Ar/4.9%H2 anneal utilizing rapid thermal annealing system. The HfON gate insulator was formed by the in-situ Ar/O2 plasma oxidation of HfN utilizing elect…
- Edisi
- VOL. 28, NO. 3, AUGUST 2015
- ISBN/ISSN
- 0894-6507
- Deskripsi Fisik
- IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015
- Judul Seri
- IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015
- No. Panggil
- -
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