Silicon carbide nanolayers as a solar cell constituent

Thin films of predominantly amorphous n-type SiC were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized SiC was used as a solidstate target. Deposition was carried out on a cold substrate of ptype Si (100) with a resistivity of 2Vcm. The Raman spectrum shows a dominant band at 982 cm1, i.e., in the spectral region characteristic for SiC. It was found …