Ditapis dengan
Thermo-Mechanical Reliability of Double-Sided IGBT Assembly Bonded by Sintere…
Double-sided insulated gate bipolar transistor (IGBT) assemblies bonded by sintered nanosilver are fabricated in this paper. Die-shear tests reveal that the lowest bonding strength between the chip and the substrate of the assemblies is about 20 MPa. Furthermore, temperature cycling tests (−40 ◦C to 150 ◦C) indicate that the shear strength declines as the number of cycles increases. In a…
- Edisi
- VOL. 14, NO. 1, MARCH 2014
- ISBN/ISSN
- 1530-4388
- Deskripsi Fisik
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014
- Judul Seri
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- No. Panggil
- -
Characterization and Reliability of Sintered Nanosilver Joints by a Rapid Cur…
A rapid current-assisted sintering technology (CAST) was used to bond electronic devices with nanosilver paste, which is a promising alternative compared with traditional solders. Instead of using an external heating source, the specimen and bonding material of nanosilver paste were heated by the alternating current whose current direction is not constant. Die-shear testing and hardness measur…
- Edisi
- VOL. 14, NO. 1, MARCH 2014
- ISBN/ISSN
- 1530-4388
- Deskripsi Fisik
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014
- Judul Seri
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- No. Panggil
- -
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