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Rational Synthesis and Structural Characterizations of Complex TiSi2 Nanostructures

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We present in this article our successes in synthesizing TiSi2 nanostructures with various complexities
using a chemical vapor deposition (CVD) method. Attention has been paid to understanding the growth
mechanism. The governing factor was found to be the surface energy differences between various crystal
planes of orthorhombic TiSi2 (C54 and C49), because of their specific atomic arrangements of Si and Ti
on the surfaces. This understanding has allowed us to control the growth morphologies and obtained
one-dimensional (1D) nanowires, two-dimensional (2D) nanonets and three-dimensional (3D) complexes
with rational designs by tuning the precursor chemical reactions. Careful studies of the atomically-resolved
microstructures revealed the existence of distorted C54 phases in 3D complexes, which was attributed to
playing the key role in the unique structure formation. These results are expected to shed light on metal
silicide nanostructure growths broadly and to present opportunities for novel nanostructure syntheses.

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Ketersediaan

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Informasi Detail

Judul Seri

Chemistry of Materials

No. Panggil

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Penerbit

Washington, DC : American Chemical Society., 2009

Deskripsi Fisik

Chem. Mater. 2009, 21, 1023–1027

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

KIMIA

Info Detail Spesifik

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Pernyataan Tanggungjawab

agus

Versi lain/terkait

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