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Annealing temperature dependent electrical and optical properties of ZnO and MgZnO films in hydrogen ambient

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Abstract.
Un-doped ZnO and MgZnO thin films were deposited on c-plane sapphire substrates by molecular-beam
epitaxy (MBE) and subsequently annealed in hydrogen ambient at 200–500 oC with a step of 100 oC. Halleffect
measurements show that annealing temperature has great effect on the electrical property of both
ZnO and MgZnO films. The electron concentration of both ZnO and MgZnO films increases with annealing
temperature ranging from 200 oC to 400 oC, and then decreases, which is attributed to incorporation of H
into ZnO as a shallower donor during the annealing process and change of solid solubility of hydrogen in
ZnO and MgZnO films with annealing temperature. The D0X emission is related to the hydrogen in
MgZnO film and the donor level of the H is estimated to be 33.5 meV. It is also found that the
controversial luminescence band at 3.310 eV can be formed in un-doped ZnO filmupon annealing and its
intensity increases with increasing annealing temperature, implying that this bandmay be not related to
p-type doping.

Keywords: Thin films, Annealing, Electrical properties, Optical properties

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Informasi Detail

Judul Seri

Applied Surface Science

No. Panggil

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Penerbit

London : Elsevier B.V.., 2009

Deskripsi Fisik

Applied Surface Science 255 (2009) 6745–6749

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

KIMIA

Info Detail Spesifik

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Pernyataan Tanggungjawab

agus

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