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Active sites on Cu/SiO2 prepared using the atomic layer epitaxy technique for a low-temperature water–gas shift reaction

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Abstract.
The atomic layer epitaxy (ALE) technique has been used to prepare uniform copper nanoparticles
dispersed on a silica support (ALE-Cu/SiO2 with 2.85±0.32 nm), which are highly active in the water–gas
shift reaction. Infrared spectra of CO adsorption are employed to study the active sites on ALE-Cu/SiO2
surface, suggesting that two major active sites are found on the copper surface, namely defect sites and
highly dispersed Cu particles and/or isolated Cu atoms sites. We report here that the defect sites on these
small Cu particles or isolated Cu atoms provide high activity for the water gas shift reaction. The high
efficiency of the water gas shift reaction on the ALE-Cu/SiO2 catalyst may be ascribed to its strong activity
in promoting H2O dissociation. Nanoscale Cu particles may be involved in strong interactions with the
SiO2 support, leading to a partially electropositive state as a result of interactions with oxygen atoms at
the surface of the support, even if the copper is reduced.

Keywords:
Atomic layer epitaxy
Copper
Water–gas shift reaction
Infrared spectroscopy
Temperature-programmed desorption
Carbon monoxide adsorption

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Informasi Detail

Judul Seri

Journal of Catalysis

No. Panggil

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Penerbit

London : Elsevier Inc.., 2009

Deskripsi Fisik

Journal of Catalysis 263 (2009) 155–166

Bahasa

English

ISBN/ISSN

00219517

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

KIMIA

Info Detail Spesifik

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Pernyataan Tanggungjawab

agus

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