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Electrochemical doping of single-walled carbon nanotubes in double layer capacitors studied by in situ Raman spectroscopy

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Abstract.
The electrochemical doping of single-walled carbon nanotubes (SWCNTs) in 1 M Et4NBF4 in
acetonitrile was investigated by in situ Raman spectroscopy. The capacitance was determined
to be 82 F/g for the positive and 71 F/g for the negative SWCNT electrode, respectively,
which approaches the typical values for microporous activated carbons used in
supercapacitors. The changes in the Raman intensities and shifts of the D and G+ bands
as well as of the radial breathing modes (RBMs) during electron and hole injection were
studied as a function of the electrode potential. For the D and G+ bands, hole doping leads
to strong upshifts which can be attributed to a stiffening of C–C bonds and the corresponding
phonon modes. Electron doping results in much less pronounced changes in the band
positions. The intensity attenuation of the RBM bands was found to be markedly different
for semi-conducting and metallic SWCNTs, whereby sufficiently high doping leads to a loss
of Raman intensity due to bleaching of electronic transitions. The main RBM bands upshift
upon both electron and hole doping, which is attributed to changes in the chemical environment
of individual SWCNTs upon charging and discharging of the electrochemical double
layer within SWCNT bundles.

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Informasi Detail

Judul Seri

C A R B ON

No. Panggil

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Penerbit

London : Elsevier Ltd.., 2009

Deskripsi Fisik

C A R B ON 4 7 ( 2 0 0 9 ) 3 8 –5 2

Bahasa

English

ISBN/ISSN

-

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

-

Subjek

KIMIA

Info Detail Spesifik

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Pernyataan Tanggungjawab

agus

Versi lain/terkait

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