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Development of PLZT dielectrics on base metal foils for embedded capacitors
Abstract
We have deposited Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on nickel and copper substrates to create film-on-foil capacitors that exhibit excellent dielectric properties and superior breakdown strength. Measurements with PLZT films on LaNiO3-buffered Ni foils yielded the following: relative permittivity of 1300 (at 25 ◦C) and 1800 (at 150 ◦C), leakage current density of 6.6×10−9 A/cm2 (at 25 ◦C) and 1.4×10−8 A/cm2 (at 150 ◦C), and mean breakdown field strength ≈2.5 MV/cm. With PLZT deposited directly on Cu foils, we observed dielectric constant ≈1100, dielectric loss (tan δ) ≈0.06, and leakage current density of 7.3×10−9 A/cm2 when measured at room temperature.
Keywords: Ferroelectric film; PLZT; Dielectric property; Chemical solution deposition
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