Gaya APA

Chang, Y. et al (2012). Electrical and physical properties of HfO2 as gate dielectrics using various thickness of TaN electrodes for MIS capacitors . New York: Elsevier B.V..

Gaya MLA

Chang, Yang-Hua. et al. "Electrical and physical properties of HfO2 as gate dielectrics using various thickness of TaN electrodes for MIS capacitors". New York: Elsevier B.V., 2012. e-journal.