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Electrical and physical properties of HfO2 as gate dielectrics using various thickness of TaN electrodes for MIS capacitors

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Abstract.
MIS capacitors with 16-nm high-k dielectric HfO2 and 50–150 nm TaN electrode were studied after postmetal-
annealing (PMA) at various conditions. The effect of TaN thickness on electrical and physical properties
is summarized. It has been found that the thermal stability of the TaN/HfO2 depends on TaN thickness.
A reduction of leakage current and an increase of breakdown voltage were obtained with 50-nm
TaN after PMA at 500 oC. The interface quality and the time-dependent dielectric breakdown (TDDB)
characteristics were also improved. On the other hand, degradation after PMA was observed in HfO2
capped with 100-nm and 150-nm TaN.

Keywords: High-k dielectric, HfO2, TaN, PMA

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Informasi Detail

Judul Seri

Microelectronic Engineering

No. Panggil

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Penerbit

New York : Elsevier B.V.., 2012

Deskripsi Fisik

Microelectronic Engineering 96 (2012) 61–66

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

FISIKA MATERIAL

Info Detail Spesifik

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Pernyataan Tanggungjawab

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