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High performance MIM capacitor using anodic alumina dielectric

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Abstract.
We report on the fabrication and electrical characterization of MIM capacitors using barrier type anodic
alumina dielectric between Al electrodes. Its fabrication is based on CMOS compatible room temperature
processing using electrochemistry which is a simple and cost effective process. The obtained capacitors
exhibit large capacitance density (above 7 fF/lm2) and very small leakage current for a voltage range
between 2 V and 2 V (below the background noise of our measurement system). The electrical characteristics
of the capacitor are directly compared to those attained previously by the authors using porous
anodic alumina instead of the barrier type one. It is shown that there is a significant improvement in both
the value of the capacitance density and the value of the non-linearity coefficient α.

Keywords: Capacitor; MIM; High-k; RF; Porous anodic aloumina

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Informasi Detail

Judul Seri

Microelectronic Engineering

No. Panggil

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Penerbit

New York : Elsevier B.V.., 2012

Deskripsi Fisik

Microelectronic Engineering 90 (2012) 12–14

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

90 (2012) 12–14

Subjek

ELEKTRONIKA

Info Detail Spesifik

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Pernyataan Tanggungjawab

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