e-journal

High rate amorphous and crystalline silicon formation by pulsed DC magnetron sputtering deposition for photovoltaics

---

Two methods of pulsed DC magnetron sputtering deposition have been used to form high rate, hydrogen-free crystalline
silicon layers. The first method is in situ crystalline silicon deposition. The second method is high rate amorphous silicon deposition followed by an anneal to induce crystallization.Over 20 mm thick crystalline silicon can be formed on wafers up to 200mm round or 156mm square. Two vacuum deposition systems were used for substrate cleaning and
deposition. The crystallinity of silicon layers was analyzed by ellipsometry and Ramn spectroscopy. Almost fully crystalline silicon is deposited in situ at table temperatures greater and equal to 650 8C. In situ crystalline silicon has been deposited at 40 nm/min and amorphous silicon can be deposited at over 400 nm/min subject to power density limitations for the silicon target. Up to 20mm thick amorphous silicon deposited at room temperature is fully crystallized by annealing in vacuum on a 1000 8C table for 2 h. This work demonstrates that sputtering
offers significant potential for depositing the absorber layer in silicon based photovoltaics.

Keywords crystalline silicon, magnetron sputtering, photovoltaic, solar cell

---

Ketersediaan

Tidak ada salinan data

Informasi Detail

Judul Seri

Phys. Status Solidi

No. Panggil

-

Penerbit

: WILEYVCH Verlag GmbH & Co. KGaA., 2015

Deskripsi Fisik

Phys. Status Solidi A 212, No. 1, 42–46 (2015)

Bahasa

English

ISBN/ISSN

-

Klasifikasi

-

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

FISIKA

Info Detail Spesifik

-

Pernyataan Tanggungjawab

Wati/Agus

Versi lain/terkait

Lampiran Berkas

Komentar

---

Anda harus masuk sebelum memberikan komentar