Multicrystalline silicon thin film solar cells on glass with epitaxially grown emitter prepared by a two-step laser crystallization process

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Multicrystalline silicon thin film solar cells on glass with epitaxially grown emitter prepared by a two-step laser crystallization process

A. Gawlik [et al.] - Nama Orang;

In this paper, we demonstrate a two-step laser crystallization process for thin film silicon solar cells on glass. In a first step a 5mm thick amorphous silicon layer is crystallized by a diode laser to get the absorber. The multicrystalline layer consists of grains with sizes in the range of 1mmto 10mm. In a second step a thin amorphous silicon layer is epitaxially crystallized by an excimer laser to form the emitter.Epitaxy was investigated in a
fluence range of 700 to 1200 mJ/cm2. The resulting thickness of the emitter is measured and numerically simulated, both resulting in 185 nm for a fluence of 1100 mJ/cm2. The solar cells achieve maximum open circuit voltages of 548mV, short-circuit current densities of up to 22.0mA/cm2 and an efficiency of 8.0%.

Keywords epitaxy, laser crystallization, multicrystalline materials, silicon, solar cells, thin films

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Judul Seri: Phys. Status Solidi A
No. Panggil: -
Penerbit: : WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim., 2015
Deskripsi Fisik: Phys. Status Solidi A 212, No. 1, 162–165 (2015)
Bahasa: English
ISBN/ISSN: -
Klasifikasi: -
Tipe Isi: -
Tipe Media: -
Tipe Pembawa: -
Edisi: -
Subjek: FISIKA
Info Detail Spesifik: -
Pernyataan Tanggungjawab: Wati/Agus

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Multicrystalline silicon thin film solar cells on glass with epitaxially grown emitter prepared by a two-step laser crystallization process

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