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Development of integrated interconnected crystalline silicon thin film solar cells

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In this work the processing sequence for an integrated interconnection concept for crystalline silicon thin-films (c-Si
TF) is introduced. This concept is designed to reduce cost in the production of large-area crystalline silicon thin-film modules. Combining the advantages of classical thin-film and wafer technologies, a soldering-free interconnection of cells in the module is realized. In order to investigate the interconnection concept, a small scale laboratory process was developed and is discussed here. Mini-modules were fabricated using this processing sequence on silicon on insulator (SOI) wafers with epitaxially grown back surface field (BSF) and base layer. Despite a non-optimized metallization sequence an open circuit voltage of over 3V could be achieved for a mini-module consisting of five cells. Mini-modules were also encapsulated without loss in efficiency after encapsulation.

Keywords crystalline silicon, integrated interconnection, thin film

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Informasi Detail

Judul Seri

Phys. Status Solidi

No. Panggil

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Penerbit

: WILEY-VCH Verlag GmbH & Co. KGaA., 2015

Deskripsi Fisik

Phys. Status Solidi A 212, No. 1 (2015)

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

FISIKA

Info Detail Spesifik

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Pernyataan Tanggungjawab

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