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Second-Order Optical Nonlinearity in Silicon Waveguides:Inhomogeneous Stress and Interfaces

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The lack of a dipolar second-order susceptibility (χ (2) ) in silicon due to the centrosymmetry of its diamond lattice usually inhibits effi cient second-order nonlinear optical processes in the silicon bulk. Recently, the deposition of
stressed silicon nitride layers and the corresponding inhomogeneous strain in silicon lead to the demonstration of second harmonic generation and electrooptic modulation in strained silicon waveguides. However, the respective
impact of the stress/strain gradient and the involved interfaces is not clear.Here, the infl uence of the stress and the stressing silicon nitride layer using second harmonic generation measurements in transmission is investigated.
The results show that the enhancement of the second-order nonlinearity arises from a constructive superposition of stress-induced and interfacerelated effects. Particularly, the stress gradient in silicon breaks the symmetry
of the crystal lattice, while positive fi xed charges at the silicon/silicon nitride interface are responsible for a pronounced electric-fi eld-induced-second harmonic (EFISH) contribution. These results demonstrate the impact of
external factors for the creation of an effective χ (2) in materials and open new perspectives for the use of second-order nonlinear optical processes in silicon photonics.

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Informasi Detail

Judul Seri

Adv. Optical Mater.

No. Panggil

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Penerbit

: WILEY-VCH Verlag GmbH & Co. KGaA., 2015

Deskripsi Fisik

Adv. Optical Mater. 2015, 3, 129–136

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

FISIKA

Info Detail Spesifik

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Pernyataan Tanggungjawab

Wati/Agus

Versi lain/terkait

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