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Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges

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We investigated the influence of polarization charges in nitride-based semiconductors. The influence due to polarization charges was calculated excluding the influences of the band offset. We found that the polarization charges (1
1013 cm2) resulted in an energy spike of more than 100 meV at the location of the charges, which is a similar value to the band offset. We then proposed the concept of polarization dilution to suppress the energy spike for better hole transport by using a graded Mg-doped AlGaN layer in UV-LEDs. Device simulation results indicate lower operating voltage and higher injection efficiency by using the polarization dilution. So far,our actual 350 nm LED with the polarization dilution showed lower operating voltage. These results suggested such polarization-charge management is important in the design of the nitride semiconductors.

Keywords AlGaN, light-emitting diodes, polarization

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Informasi Detail

Judul Seri

Phys. Status Solidi

No. Panggil

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Penerbit

: WILEY–VCH Verlag GmbH & Co. KGaA., 2015

Deskripsi Fisik

Phys. Status Solidi A 212, No. 5, 920–924 (2015)

Bahasa

English

ISBN/ISSN

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

FISIKA

Info Detail Spesifik

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Pernyataan Tanggungjawab

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