e-journal

Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module

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The relationship between bonding wire liftoff and terminal voltage in insulated gate bipolar transistor (IGBT) power module is studied. Bonding wire liftoff failure is one of the most dominant limiting factors to the reliability behavior of IGBT power module. In this paper, in order to monitor this type of fault, the effects of the typical degradations are considered. The parasitic inductance and gate equivalent capacitance of IGBT
module change due to bonding wire liftoff, which have different impacts on the external characteristics. So, two aspects of IGBT module terminal characteristics are investigated to identify any measurable signature used for monitoring bond wire liftoff failures: 1) gate–emitter voltage during turn-on process and 2) collector–emitter voltage during turn-off process. This paper aims to provide useful information for further development in monitoring the health of IGBT module.

Index Terms—Fault indicator, insulated gate bipolar transistors (IGBTs), semiconductor device reliability, wire bond liftoff.

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Ketersediaan

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

DOI: 10.1109/TDMR.20

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

ELEKTRONIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

agus

Versi lain/terkait

Lampiran Berkas

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