e-journal

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

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Abstract
Characterizing positive charges and its energy distribution in gate dielectric is useful for process qualification. A discharge-based technique is introduced to extract their energy distribution both within and beyond substrate band-gap. This paper investigates the difficulties in its implementation on typical industrial parameter analyzer and provides solutions. For the first time, we demonstrate the technique’s applicability to the advanced 22-nm fabrication process and its capability in evaluating the impact of different strains on the energy distribution. The test time is within several hours. This, together with its implementation on industrial parameter analyzer, makes it a useful tool in the semiconductor manufacturing foundries for process monitoring and optimization.

Index Terms—Energy distributions, energy profiles, positive charges (PCs), hole traps, negative bias temperature instability (NBTI).

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

ENERGI

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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