e-journal

A Plasticity-Based Model of Material Removal in Chemical–Mechanical Polishing (CMP)

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Abstract
It is well known that the chemical reaction between an oxide layer and a water-based slurry produces a softer hydroxylated interface layer. During chemical–mechanical polishing (CMP), it is assumed that material removal occurs by the plastic deformation of this interface layer. In this paper, the behavior of the hydroxylated layer is modeled as a perfectly plastic material, and a mechanistic model for material removal rate (MRR) in CMP is developed. The deformation profile of the soft pad is
approximated as the bending of a thin elastic beam. In addition to the dependence of MRR on pressure and relative velocity, the proposed plasticity-based model is also capable of delineating the effects of pad and slurry properties. The plasticity-based model is utilized to explore the effects of various design parameters (e.g., abrasive shape, size and concentration, and pad stiffness) on the MRR. Model predictions are compared with existing experimental observations from glass polishing, lapping, and CMP.

Index Terms—CMP, material removal rate, particle scale model

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Ketersediaan

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 14, NO. 4, NOVEMBER 2001

No. Panggil

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Penerbit

: IEEE., 2001

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 14, NO. 4, NOVEMBER 2001

Bahasa

English

ISBN/ISSN

0894–6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 4, NOVEMBER 2001

Subjek

SEMIKONDUKTOR
SKALA PARTIKEL

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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