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A Temperature Sensor With an Inaccuracy of 1=+0.8 C Using 90-nm 1-V CMOS for Online Thermal Monitoring of VLSI Circuits

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Abstract
This paper proposes an accurate four-transistor temperature sensor designed, and developed, for thermal testing and monitoring circuits in deep submicron technologies. A previous three-transistor temperature sensor, which utilizes the temperature characteristic of the threshold voltage, shows highly linear characteristics at a power supply voltage of 1.8 V or more; however, the supply voltage is reduced to 1 V in a 90-nm CMOS process. Since the temperature coefficient of the operating point’s current at a 1-V supply voltage is steeper than the coefficient at a 1.8-V supply voltage, the operating point’s current at high temperature becomes quite small and the output voltage goes into the subthreshold region or the cutoff region. Therefore, the operating condition of the conventional temperature sensor cannot be
satisfied at 1-V supply and this causes degradation of linearity. To improve linearity at a 1-V supply voltage, one transistor is added to the conventional sensor. This additional transistor, which works
in the saturation region, changes the temperature coefficient gradient of the operating point’s current and moves the operating points at each temperature to appropriate positions within the targeted temperature range. The sensor features an extremely small area of 11.6 4.1 m2 and low power consumption of about 25 W. The performance of the sensor is highly linear and the predicted temperature error
is merely 1.0 to +0.8 C using a two-point calibration within the range of 50 C to 125 C. The sensor has been implemented in the ASPLA CMOS 90-nm 1P7M process and has been tested successfully with a supply voltage of 1 V.

Index Terms—CMOS, temperature coefficient, temperature sensor, thermal diode, thermal monitoring, two-point calibration

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 21, NO. 2, MAY 2008

No. Panggil

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Penerbit

: IEEE., 2008

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 21, NO. 2, MAY 2008

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 21, NO. 2, MAY 2008

Subjek

KOEFISIEN TEMPERATUR
DIODA TERMAL
TEMPERATUR SENSOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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