e-journal

Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing

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Abstract
“Stealth dicing (SD)” was developed to solve inherent problems of a dicing process such as debris contaminants and unnecessary thermal damages on a work wafer. A completely dry process is another big advantage over other dicing methods. In SD, the laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing the temperature dependence of the absorption coefficient of the wafer. The absorbed power forms a modified layer in the wafer, which functions as the
origin of separation in the separation process. In this paper, we applied this method for an ultra-thin wafer. The reliability of devices that is diced by SD was confirmed.

Index Terms—Dicing, dry processing, laser processing, system in package, thin/ultra-thin wa

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Ketersediaan

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 20, NO. 3, AUGUST 2007

No. Panggil

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Penerbit

: IEEE., 2007

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 20, NO. 3, AUGUST 2007

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 20, NO. 3, AUGUST 2007

Subjek

SEMIKONDUKTOR
DICING
PENGOLAHAN KERING

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

Lampiran Berkas

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