e-journal

Carrier Profiling Technology in Ten Nanometers Devices

---

Abstract
The advanced carrier concentration evaluation scheme was proposed with combined higher precise scanning
spreading resistance microscopy (SSRM) measurement and technology-CAD (TCAD) analysis in this paper. The cyclic contact (CC) method was applied to variation reduction of SSRM resistance to more accurately characterize for the device. The CC method suppresses dust generation. The variation of resistance
with the CC method decreased drastically less than 10%. SSRM resistances were corrected to obtain the potential drop in the probe and other resistance component in the measurement system using TCAD analyses. The effective contact probe tip radius was derived from TCAD analysis. The optimization of
both sample and measurement conditions were obtained before the actual measurement. The electrical phenomenon in the device measurement can be known by the TCAD analysis. The SSRM measurement of advanced flash memory was successfully demonstrated with adapted these technologies. This result suggests strongly that 10 nm order size device can be measured by using SSRM with the CC method.

Index Terms—Atomic force microscopy (AFM), carrier profile, cyclic contact (CC) method, flash memory, scanning spreading resistance microscopy (SSRM), technology-CAD (TCAD).

---

Ketersediaan

Tidak ada salinan data

Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

-

Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

-

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR
TEKNOLOGI CAD

Info Detail Spesifik

-

Pernyataan Tanggungjawab

ETY

Versi lain/terkait

Lampiran Berkas

Komentar

---

Anda harus masuk sebelum memberikan komentar