Contact Chains for FinFET Technology Characterization | Elibrary Perpustakaan Universitas Riau

Pencarian berdasarkan :

SEMUA Pengarang Subjek ISBN/ISSN Pencarian Spesifik

Pencarian terakhir:

e-journal

Contact Chains for FinFET Technology Characterization

Tomasz Brozek [et.al.] - Nama Orang;

Abstract
Electrical characterization remains a key element in technology development and manufacturing of integrated circuits. Contact chain is a well known part of the diagnostic set of test structures used across many generations of silicon processes. Implementation of such test structures becomes challenging in new technologies with 3-D devices, like FinFET. Contacts to active regions of such devices are inherently dependent on the architecture of epitaxial raised source and drain and for proper
characterization require the presence of transistor gates, which set the environment for contacts. This paper describes a new type of test structure, so-called gated contact chains, developed for contact process characterization in FinFET technologies. Instead of simple chain of contacts, each structure contains a series of active devices with common gate electrode used to turn on the chain of transistors to enable measurement of chain resistance. To discriminate between chain failures caused by an open contact or by other mechanisms (e.g., bad transistor with very high threshold voltage) a series of measurement under various test conditions was performed and analysed. In order to overcome
a limitation of the contact chain size and enable data collection from larger sample of contacts, we proposed to implement the gated chains in addressable arrays, increasing their density and failure rate observability. Finally, the paper presents the examples of electrical failure modes detected by those chains in FinFET process.

Index Terms—FinFET, CMOS, characterization, contacts, test structures, failure mode.

Ketersediaan

Tidak ada salinan data

Informasi Detail

Judul Seri: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015
No. Panggil: -
Penerbit: : IEEE., 2015
Deskripsi Fisik: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015
Bahasa: English
ISBN/ISSN: 0894-6507
Klasifikasi: -
Tipe Isi: -
Tipe Media: -
Tipe Pembawa: -
Edisi: VOL. 28, NO. 3, AUGUST 2015
Subjek: SEMIKONDUKTOR
FINFET
CMOS
Info Detail Spesifik: -
Pernyataan Tanggungjawab: ETY

Versi lain/terkait

Tidak tersedia versi lain

Lampiran Berkas

Contact Chains for FinFET Technology Characterization

Komentar

Anda harus masuk sebelum memberikan komentar