e-journal

Control of Epitaxial Growth of SiGe

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Abstract
Silicon-Germanium (SiGe), used to boost pFET performance and enhance the properties of high-k metal gate devices, is grown by selective epitaxy on silicon. Since device parameters depend critically on the deposited SiGe thickness, we apply several advanced techniques to control deposition. Feedback and
feed-forward of growth rate data is used to control deposition tools. We also apply a pattern-density based predictive growth rate, since pattern density effects cause the deposited thickness to be different across different product chips under otherwise identical conditions. We use run to run analysis of deposition data and a feature of the deposition tool to tune cross wafer deposition rates for optimized uniformity. Finally, we consider local (within chip) growth rate variation. We demonstrate that the deposited layer thickness is in acceptable range for device performance across a product chip.

Index Terms—Advanced process control, SiGe.

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Ketersediaan

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 4, NOVEMBER 2015

Subjek

SEMIKONDUKTOR
SILICON GERMANIUM (SIGE)

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

Lampiran Berkas

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