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Correlational Study Between SiN Etch Rate and Plasma Impedance in Electron Cyclotron Resonance Plasma Etcher for Advanced Process Control

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Abstract
The correlation between the change in the etching rate of SiN and the change in the monitored plasma impedance was investigated to estimate the capability of critical dimension (CD) prediction with a plasma impedance monitor (PIM). The results obtained with the PIM were compared with those of
optical emission spectroscopy (OES), which was performed using the emission intensity ratio of C2/H, and showed that the SiN etching rate is strongly correlated with several values obtained with the PIM. We conclude that the PIM has the potential to predict CDs with the same accuracy as that of OES.

Index Terms—Plasma etching, plasma impedance monitor (PIM), optical emission spectroscopy (OES), advanced process control (APC), harmonics analysis of bias waveform.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

-

Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR
OPTICAL EMISSION SPECTROSCOPY (OES)

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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