Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

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Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Steve Knebel [et al.] - Nama Orang;

This paper presents the results of I–V and constant-voltage-stress measurements on symmetrical dielectric ZrO2/Al2O3/ZrO2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal–insulator–metal capacitors. The temperaturedependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.

Index Terms: High-k, leakage model, metal–insulator–metal (MIM) capacitor, reliability, ZrO2.

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Judul Seri: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
No. Panggil: -
Penerbit: New York : IEEE., 2014
Deskripsi Fisik: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014
Bahasa: English
ISBN/ISSN: DOI: 10.1109/TDMR.20
Klasifikasi: -
Tipe Isi: -
Tipe Media: -
Tipe Pembawa: -
Edisi: VOL. 14, NO. 1, MARCH 2014
Subjek: ELEKTRONIK
Info Detail Spesifik: -
Pernyataan Tanggungjawab: agus

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FULL TEXT: Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

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