e-journal
Hamming SEC-DAED and Extended Hamming SEC-DED-TAED Codes Through Selective Shortening and Bit Placement
Radiation particles can impact registers or memories creating soft errors. These errors can modify more than one bit causing a multiple cell upset (MCU) which consists of errors in registers or memory cells that are physically close. These MCUs can affect a single word, producing adjacent bit errors. Hamming codes are commonly used to protect memories or registers from soft errors. However, when multiple errors occur, a Hamming code may not detect them. In this letter, single-error-correction double adjacent error detection Hamming codes
are presented for 16-, 32-, and 64-bit words. Additionally, single-errorcorrection double-error-detection triple adjacent error detection codes based on extended Hamming are presented as well. The enhanced detection
is achieved by performing a selective shortening and reordering of the Hamming matrix so adjacent errors result in a syndrome that does not match that of any single error. These codes will help in the detection of MCUs in SRAM memory designs.
Index Terms: Error correction codes (ECCs), Hamming codes, memory, multiple cell upsets (MCUs).
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