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Effect of Plasma Process for SiO2 Film on Sidewall

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Abstract
We evaluated the physical and electrical characteristics of SiO2 treated by plasma oxidation on top and sidewall. The plasma process is less effective for SiO2 on sidewall than on top and further less for small pattern. Both the characteristics
for SiO2 on sidewall are sensitive to plasma condition in deposition sequence, while not for SiO2 on top. When the plasma process is used as post treatment on SiO2 with high coverage and the poor characteristics, they are also not dependent on
the condition. Moreover, the post plasma treatment can improve electrical characteristic beyond the level of SiO2 deposited by the same plasma oxidation condition.

Index Terms—Dielectric films, leakage currents, metal oxide semiconductor (MOS) devices, plasma materials processing.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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