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Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching

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Abstract
A wafer temperature feedback control system during plasma processing with rapid, precise, and real-time temperature monitoring employing frequency-domain low-coherence interferometry was developed. To keep the temperature within a specific range, plasma was actively switched on and off, controlled by signals from a monitoring system. It was applied to an organic film etching process with an H2 and N2 mixture gas plasma. The organic material etching yield from atomic hydrogen
has a relatively high sensitivity to temperature, and a constant temperature is required to achieve precise etching profiles. This system maintained the wafer temperature within a few degrees for H2/N2 plasma discharges. Duty ratios per discharge gradually decreased because the temperature of the chamber component
parts around the wafer increased. The trench width etched in the organic film increased with increasing wafer temperature. This is because of a temperature dependence balance between the etching reaction and protection film formation on the trench sidewall.

Index Terms—Feedback control, organic film, plasma etching, semiconductor manufacturing, wafer temperature.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 4, NOVEMBER 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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