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How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis

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Abstract
In this paper, the authors investigate how target sputtering, dose retention, and damage formation is generated in thin-body semiconductors by means of energetic ion impacts. The problems associated with ion implanting or plasma doping Si thin-bodies are well documented, however, it is not clear how
changing the target material to other semiconductors currently being considering for multi-gate field-effect transistor devices will counteract or enhance these effects. By means of binary collision
approximation based modeling with the Stopping and Range of Ions in Matter (SRIM) software, we explore the consequences of different target atomic density, lattice density, surface binding energies, and lattice binding energies on target sputtering, dose retention, and damage formation.

Index Terms—Semiconductors, semiconductor device doping, silicon, germanium, III-V semiconductor materials, field effect transistors (FETs).

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 4, NOVEMBER 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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