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Implementation of Tungsten Metallization In Multilevel Interconnection Technologies

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Abstract
The techniques of experimental design and response-surface methodology have been used to produce empirical models of the deposition and etchback of tungsten in commercially available reactors
for a tungsten plug technology. Deposition was carried out in a Genus 8402 LPCVD batch reactor by the Hz reduction of WF,. Responsesurfaces for deposition rate, sheet resistance uniformity, resistivity,
and film stress were developed as a function of reactor pressure, reactor temperature, and How rate of WF, at a fixed H, How rate using linear-interactive models. A thin layer of TIN was used to insure adhesion of tungsten to SO,. Etchback of the composite layer of W/TiN to form via plugs was performed in a Tegal 804 single-wafer system with a two-step process using mixtures of SF, with CLF6 and He with CIz in step 1 and step 2, respectively. Process parameters for both steps were obtained from quadratic models of etch rate and etch uniformity. A plasma loading effect with tungsten in the F-rich plasma of step 1 was controlled in two ways: by addition of CIFd to form fluorocarbon fragments in the plasma which compete with W for F atoms and by precise endpoint detection of excited N, molecules in the plasma which are formed during the etching of the underlying TIN layer

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Informasi Detail

Judul Seri

IEEE 1RANSACTIONS ON StMICONDUCTOR MANUFACTL!RINCi. VOL 3. NO 4. NOVEMBER 1990

No. Panggil

-

Penerbit

: IEEE., 1990

Deskripsi Fisik

IEEE 1RANSACTIONS ON StMICONDUCTOR MANUFACTL!RINCi. VOL 3. NO 1. NOVEMBER I W I

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL 3. NO 4. NOVEMBER 1990

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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