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Manufacturing Challenges of GaN-on-Si HEMTs in a 200mm CMOS Fab

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Abstract
In this paper, we report on the challenges related to growth and processing of 200mm GaN-on-Si wafers in a CMOS fab. We describe the Au free process we developed as well as how we assure wafer quality prior processing. For the first time, we analyze possible Ga contamination issues related to the processing of GaN wafers and we present the cleaning procedures we developed to avoid it.

Index Terms—Contamination, Gallium nitride, processing, power semiconductor devices, semiconductor device manufacture.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 26, NO. 3, AUGUST 2013

No. Panggil

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Penerbit

: IEEE., 2013

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 26, NO. 3, AUGUST 2013

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 26, NO. 3, AUGUST 2013

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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