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Non-Contact, Sub-Surface Detection of Alloy Segregation in Back-End of Line Copper Dual-Damascene Structures

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Abstract—Alloy seedlayers for copper back-end of line interconnects have become common at technology groundrules of 45 nm and below, due to reliability requirements. The key requirement of the minority alloy component (e.g., Al or manganese, also referred to as the “dopant”) is that it segregates to
the copper (Cu)/dielectric cap layer interface in order to promote adhesion between the Cu in the line and the dielectric capping layer. The segregation beneath the dielectric cap has a complex
dependence on many process parameters and needs to be monitored across the wafer. In this paper, we present a contactless, in-line, fast, and reliable Kelvin probe technique for the subsurface
detection of alloy segregation in Cu interconnects for sub-22 nm technologies.

Index Terms—Alloy segregation, back-end of line (BEOL), copper (Cu) interconnects, Kelvin probe, manganese (Mn), non-contact detection, non-destructive detection technique, subsurface detection, reliability, transition metal alloy.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 4, NOVEMBER 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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