e-journal

Pattern-Independent PMD Layer Planarization by Controlling its Volume Before CMP

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Abstract—We achieved excellent planarization for a pre-metal dielectric (PMD) layer regardless of its pattern density distribution by making the distribution uniform before chemical mechanical polishing (CMP) without any stopper layer. The distribution control was done by lithography using a checkered
reticle on the high-density PMD area followed by etching of the PMD layer to uniformize the CMP rates at both areas. After this planarization, the PMD layer was flattened in the local and global regions. The PMD step-height within chip was approximately 8 nm (approximately 1% of PMD height), which is a variation of less than one tenth compared with conventional planarization, and the non-uniformity of PMD
thickness within wafer was approximately 2%. The planarized PMD layer suppressed the defocusing in lithography for contact hole formation on the layer, thus dramatically reducing contact-open failures in a chip of approximately 50 × 110 nm in diameter with 620-nm high-contact holes. The number of
defects was one-thousandth that of a conventionally planarized PMD layer.

Index Terms—Atomic force microscopy, chemical mechanical polishing (CMP), contact, density distribution,
planarization, pre-metal dielectric (PMD), voltage contrast

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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