e-journal

Source/Drain Series Resistance Extraction in HKMG Multifin Bulk FinFET Devices

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Abstract—Effective extraction of source/drain (S/D) series resistance is a challenging task owing to poor epi-growth and nonuniform distribution of current density in S/D, critical limitation of restrictive design rule, ultra thin contact film, and complicated 3-D fin-type field effect transistor (FinFET) structure. In this paper, we report a test structure for measurement of linear and nonlinear S/D series resistances. This technique enables us to evaluate each component of S/D series resistance
resulting from the S/D contact, the S/D epi-growth fin, the S/D extension, and the channel gate, respectively. The S/D series resistance for fins on different layout location of the same diffusion
is characterized and modeled by connection with a specified S/D contact on it. Furthermore, the S/D series resistance of each fin can be analytically calculated, respectively, by swapping the S/D
bias condition. The proposed test structure and extraction technique provides a robust monitoring tool to diagnose a process weak point of the 16-nm multifin high-k/metal gate bulk FinFET devices.

Index Terms—Bulk fin-type field effect transistor (FinFET), contact size, channel fin doping, epi growth, extraction, explicit model, high-k/metal gate, measurement, multifins, series resistance, source/drain (S/D) resistance, test structure

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 2, MAY 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 2, MAY 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 2, MAY 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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