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Study and Improvement on Tungsten Plug Corrosion in CMP Process for PCRAM

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Abstract—To reduce the reset current for developing reliable high density phase change random access memory (PCRAM), small bottom electrode contact (BEC) size formation is a critical process. One of the failure mode for the process is the corrosion of tungsten plug, which is caused by tungsten chemical mechanical planarization (CMP) process. In this paper, this CMP process was analyzed. The tungsten polishing step process was characterized by the coefficient j and it shows good performance in tungsten
polishing process. The alkali and acidic buff slurry effect on tungsten plug performance were studied. The result shows that the recess free tungsten plug had been fabricated with acidic buff slurry. The electric results confirm that it can fulfill the set operation of PCRAM cells.

Index Terms—Chemical corrosion, chemical mechanical planarization, tungsten polishing, phase change memory

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 27, NO. 1, FEBRUARY 2014

No. Panggil

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Penerbit

: IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 27, NO. 1, FEBRUARY 2014

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 27, NO. 1, FEBRUARY 2014

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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