Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

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Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Akihiko Sagara - Nama Orang; Akira Uedono - Nama Orang; Satoshi Shibata - Nama Orang;

Abstract—We investigated the thermal behavior of defects remaining in low-dose (700 ◦C to remove residual damage as well as to activate impurities.

Index Terms—Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

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Judul Seri: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 1, FEBRUARY 2015
No. Panggil: -
Penerbit: : IEEE., 2015
Deskripsi Fisik: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 1, FEBRUARY 2015
Bahasa: English
ISBN/ISSN: 0894-6507
Klasifikasi: -
Tipe Isi: -
Tipe Media: -
Tipe Pembawa: -
Edisi: VOL. 28, NO. 1, FEBRUARY 2015
Subjek: SEMIKONDUKTOR
Info Detail Spesifik: -
Pernyataan Tanggungjawab: ETY

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Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

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