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Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization

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Abstract—We developed a method to compact the glass sheets of a flat-panel displays that use metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), and the effects of thermal stress on the fabricated devices were compared against those of a bare-glass device. The glass substrate was exposed to a temperature of 650 ◦C for 40 h in order to suppress the glass shrinkage to 0.01 ppm, which suitable for a MILC poly-Si TFT process. The compressive strain
that originates from glass shrinkage generally increases the size of the micro-cracks and the vacancies, and as a result, most of the electrical parameters of a bare glass device (such as the
on-current, off-current, field-effect mobility, subthreshold slope, and threshold voltage) had a higher level of degradation than those of the device with the compacted glass. The increase in the
on-current and the field-effect hole mobility under the compressive strain for poly-Si TFTs showed a similar behavior to that of single-crystalline-silicon (c-Si) TFTs under compressive strain. However, the increase in the off-current was the converse of that of strained c-Si TFT.

Index Terms—Metal-induced lateral crystallization (MILC), polycrystalline-silicon (poly-Si) thin-film transistor (TFT), glass shrinkage, thermal stress.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 1, FEBRUARY 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

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Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 1, FEBRUARY 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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