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Uniformity Control of 3-D Stacked ICs: Optical Metrology and Statistical Analysis

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Abstract—This paper evaluates various optical metrology techniques for in-line control of the niformity of 3-D stacked structures. Key process steps during 3-D integration flow were identified and characterized in order to quantify their specific intra-wafer dispersion signature. The cross correlation between the various intra-wafer process step signatures was then analyzed to verify the data set consistency. The analysis indicated that the measurement data are consistent over the process integration flow, and that a simple model quantitatively explains the intrawafer signatures observed. The results highlight the importance of controlling those specific steps and provide a new alternative
for advanced process control implementation.

Index Terms—Optical metrology, 3-D integration, TSV.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 4, NOVEMBER 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 4, NOVEMBER 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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