Gaya APA

Ohmi, S. et al (2015). Variability Improvement by Si Surface Flattening of Electrical Characteristics in MOSFETs With High-k HfON Gate Insulator (VOL. 28, NO. 3, AUGUST 2015). : IEEE.

Gaya MLA

Ohmi, Shun-ichiro. et al. "Variability Improvement by Si Surface Flattening of Electrical Characteristics in MOSFETs With High-k HfON Gate Insulator". VOL. 28, NO. 3, AUGUST 2015 : IEEE, 2015. e-journal.