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Experimental Study on Etching Characteristics of a Spin-Etching Method

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Abstract—In this paper, a spin-etching method is proposed for wafer thinning using a mixture of hydrofluoric, nitric, and acetic acids (HNA solution), and experimental studies are conducted. In the spin-etching apparatus, the silicon wafer was rotated in a Teflon bath filled with HNA solution. The etch rate of HNA spin-etching can be determined by mixture ratio; mass transfer, both through and in boundary layer; and heat transfer. When the Reynolds number of the flow on the rotating disk is below
1.8 × 105, the flow is in the laminar region, and the boundary layer thickness and convective heat transfer coefficient do not vary with radius at the same rotational speed. In this study, the silicon wafer was rotated at

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Informasi Detail

Judul Seri

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 24, NO. 6, DECEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

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Bahasa

English

ISBN/ISSN

1057-7157

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 24, NO. 6, DECEMBER 2015

Subjek

MIKROELEKTROMEKANIKAL

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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