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Investigation of a Vacuum Encapsulated Si-to-Si Contact Microswitch Operated From −60 °C to 400 °C

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Abstract—We report on characterization of Si-to-Si contact microswitches fabricated in an ultraclean encapsulation process. This three-terminal microswitch relies on a curved beam (source) that actuates toward the contact terminal (drain) by charging the control terminal (gate). The operation range of this switch from −60 °C to 300 °C is investigated, which approximately yields a resistance drift of −200 /K. Our experiments include tests of the high-temperature lifetime during continuous ON–OFF cycles. By reducing Joule heating at the contact, preliminary results demonstrate at least 106 cycles longer lifetime at 400 °C. Subsequently, the failure mode is investigated and reported. The
study of ultraclean Si-to-Si contact-based microswitches provides a crucial guideline to the field of mechanical and electrical failure mechanisms for harsh environment applications. [2014-0373]

Index Terms—Reliability, rugged electronics, electrostatic switch, relay, switch

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Informasi Detail

Judul Seri

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 24, NO. 6, DECEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

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Bahasa

English

ISBN/ISSN

1057-7157

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 24, NO. 6, DECEMBER 2015

Subjek

MIKROELEKTROMEKANIKAL

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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