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Low-Temperature Wafer Bonding Using Solid–Liquid Inter-Diffusion Mechanism

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Abstract—The low temperature joining of semiconductor substrates on wafer level by solid–liquid inter-diffusion bonding using the Cu/Ga and Au/In systems is investigated regarding the bonding parameters and their influence on bond interface properties. The focus is on temperature dependence and composition
of interface. In the case of Cu/Ga bonding, a phase transition from CuGa2 to Cu9Ga4 was found to be primarily responsible for an increase in bonding strength. After the temperature treatment of 90 °C, a shear strength of up to 90 MPa could be achieved. Furthermore, the combination of Au and In with composition ratios suitable for AuIn2 and AuIn intermetallic phase formation was investigated. In the case of AuIn shear strength, 96 MPa was achieved using a bonding temperature of 200 °C. [2014-0325]

Index Terms—Wafer bonding, intermetallic, gallium alloys, solid liquid interdiffusion (SLID), transient liquid phase (TLP).

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Informasi Detail

Judul Seri

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 24, NO. 6, DECEMBER 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

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Bahasa

English

ISBN/ISSN

1057-7157

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 24, NO. 6, DECEMBER 2015

Subjek

MIKROELEKTROMEKANIKAL

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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