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Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple-Cell Upsets in 10T Subthreshold SRAM

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This paper presents measurement results of alphaparticle-induced soft errors and multiple-cell upsets (MCUs) in 65-nm 10T SRAM with a wide range of supply voltage from 1.0 to 0.3 V. We reveal that the soft-error rate (SER) at 0.3 V is six times higher than that at 1.0 V and the MCU rate significantly
increases in the subthreshold region. To investigate the reason for the MCU increase, the dependences of the MCU rate on the body-bias voltage and the distance between well ties are examined, and we conclude that the main cause of the MCU increase is not the parasitic bipolar effect but another mechanism, such as
charge sharing. In addition, the dependence of the variation in the soft-error immunity of each memory cell on the supply voltage is examined, since SRAMs operating in the subthreshold region are sensitive to manufacturing variability. Measurement results indicate that the number of soft errors in each memory cell
varies cell by cell, whereas the cause of the variation is explained by the spatial randomness of alpha-particle hits, and a distinct influence of manufacturing variability is not observed even in the
subthreshold region. Index Terms—Alpha-particle-induced soft error, multiple-cell upset (MCU), soft-error rate (SER), subthreshold circuit.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

: ., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

yuli/agus

Versi lain/terkait

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