e-journal

Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices

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The reliability of structural and electrical properties of mixed As/Sb staggered gap tunnel field-effect transistors (TFETs) for high-temperature operation was comprehensively investigated from 25 ◦C to 150 ◦C. Temperature-dependent X-ray measurements showed identical strain relaxation of the active region, indicating that no additional dislocations were introduced at 150 ◦C. Symmetric 2-D surface crosshatch patterns before and after annealing suggested no significant structural properties change
during high-temperature operation. No extra interdiffusion of species at the source/channel heterointerface was observed at 150 ◦C, confirmed by secondary ion mass spectrometry measurement.
The leakage current of the fabricated reverse-biased p+-i-n+ diode exponentially increased with increasing temperature due to Shockley–Read–Hall generation–recombination mechanism. The ON-state drain current of the TFET device showed weak temperature dependence, and it decreased with increasing
temperature from 25 ◦C to 100 ◦C due to the variation of Fermi distribution and the increase in channel resistance but increased from 100 ◦C to 150 ◦C due to the reduction of both band-gap energy and the effective tunneling barrier height. The subthreshold slope has a strong positive temperature-dependent property particularly at higher temperature due to trap-assisted tunneling process. These experimental results demonstrated stable structural properties and distinguished device characteristics of the mixed
As/Sb staggered gap TFETs at higher operating temperature. The temperature-dependent structural and device properties of the mixed As/Sb staggered gap TFET highlight the importance of the reliability on high-temperature operation of TFETs for future low-power digital logic applications. Index Terms—High-temperature reliability, mixed As/Sb, staggered gap heterostructure, tunnel field-effect transistor (TFET).

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

: ., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

yuli/agus

Versi lain/terkait

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